EFFECT OF A STATIC-FIELD ON THE STOCHASTIC LAYER OF MICROWAVE-DRIVEN HYDROGEN

被引：1

作者：

COCKE, S

REICHL, LE

机构：

[1] Center for Statistical Mechanics, University of Texas at Austin, Austin

来源：

PHYSICAL REVIEW A | 1990年 / 41卷 / 07期

关键词：

D O I：

10.1103/PhysRevA.41.3733

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We study the effect of a static field on the stochastic layer of microwave-driven hydrogen using two approaches. We use the Chirikov overlap criterion on the Hamiltonian to estimate the critical field strength required for global chaos. We then derive the whisker and standard maps for this system valid for arbitrary field strengths and use the standard map to obtain a second estimate for the onset of global chaos. The standard-map estimate agrees well with both strobe plots and the whisker map plots for this system. Throughout, we use parameter values typically found in experiments. © 1990 The American Physical Society.

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页码：3733 / 3739

页数：7

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