CRYSTAL-GROWTH OF CUINSE2 BY THE METHOD OF HORIZONTAL BRIDGMAN WITH 2 TEMPERATURE ZONES

被引:7
作者
MATSUSHITA, H [1 ]
ENDO, S [1 ]
IRIE, T [1 ]
NAKANISHI, H [1 ]
机构
[1] SCI UNIV TOKYO,FAC SCI & TECHNOL,DEPT ELECT ENGN,NODA,CHIBA 278,JAPAN
关键词
D O I
10.1016/S0022-0248(07)80018-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Single crystals of CuInSe2 were prepared by the method of horizontal Bridgman with two temperature zones (2T-HB method) in order to control the Se vapor pressure. The Se composition of the crystals increases with an increase of the Se vapor pressure under which the crystals are grown. All of the crystals studied show p-type conduction. The Hall mobility is maximum and the carrier concentration is minimum at about 20 Torr of the Se vapor pressure. The temperature dependence of the carrier concentration for the various samples shows an activation energy of about 75 meV.
引用
收藏
页码:655 / 658
页数:4
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