CORRECTING FOR OXYGEN CONCENTRATIONS IN SINGLE-SIDE POLISHED WAFERS

It is the purpose of this study to propose a simple correction that can readily be applied to correct for such deviations when one is determining oxygen concentrations in SSP (Single-Side Polished) Examples of absorbance spectra obtained from SSP and DSP wafers are presented. It is clear that the curved baseline will have a substantial influence on establishing the oxygen peak height, unless a very narrow baseline is used in calculations. Moreover, the influence of the curved baseline on determining the height of the silicon peak is unknown, since this peak is not present in the plotted absorbance spectra. Any change in silicon peak height would influence the sample thickness, as used in the calculations for oxygen concentration.