ANALYSIS OF IMPURITY CONCENTRATION DISTRIBUTIONS IN PULLED SEMICONDUCTOR CRYSTALS

InSb and GaSb single crystals were grown by the Czochralski method. The impurity concentration distribution in the melt and crystal was investigated experimentally and computationally as a function of the interface segregation coefficient, the shape of the solid-liquid interface and the growth rate. It was found that the impurity concentration distribution in the melt was largely influenced by the interface segregation coefficient; the impurity concentration in the crystal increased as the shape of the solid-liquid interface became more planar and also as the growth rate increased; the impurity concentration was more markedly influenced by the growth rate than by the shape of the solid-liquid interface. When the growth rate was large, the impurity concentration increased and the shape of the solid-liquid interface was concave toward the melt near the crystal periphery. When the growth rate was small, the impurity concentration decreased and the shape of the solid-liquid interface was convex toward the melt. © 1990 The Mineral,Metal & Materials Society,Inc.