共 50 条
- [41] ION-IMPLANTATION AND ANNEALING OF FE FOR SEMIINSULATING LAYERS FORMATION IN INP NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 773 - 776
- [42] PROPERTIES INVESTIGATION OF THIN SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 39 (3-4): : 163 - 167
- [43] BURIED DOPANT AND DEFECT LAYERS FOR DEVICE STRUCTURES WITH HIGH-ENERGY ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 941 - 950
- [45] A STRUCTURAL AND SPECTROSCOPIC EVALUATION OF BURIED GAALAS LAYERS FORMED BY DUAL ION-IMPLANTATION INTO GAAS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 52 (01): : 51 - 56
- [46] Structural characterization of buried nitride layers formed by nitrogen ion implantation in silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (08): : 1447 - 1449
- [48] FORMATION OF BURIED COSI2 LAYERS BY ION-IMPLANTATION, STUDIED BY MOSSBAUER-SPECTROSCOPY AND RUTHERFORD BACKSCATTERING SPECTROSCOPY MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 157 - 161
- [49] FORMATION OF AMORPHOUS GAP LAYERS BY ION-IMPLANTATION AT LOW-TEMPERATURE EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 196 - 199