DIRECT DETERMINATION OF BARRIER VOLTAGE IN ZNO VARISTORS

被引：74

作者：

VANKEMENADE, JTC

EIJNTHOVEN, RK

机构：

[1] Philips Research Laboratories, Eindhoven

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.326015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single barriers in a ZnO varistor are measured separately. The step voltage at a grain boundary is 3.6 V at 1 μA. No great differences could be found between samples obtained from several suppliers. In a SEM the barriers could be detected by the voltage-contrast method. By using electron-beam-induced currents the spots where current is flowing may be located.

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页码：938 / 941

页数：4

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