A PROPOSAL CONCERNING NATURE OF INTERFACE STATES IN SI/SIO2

被引：3
作者：
CHENG, YC
机构：
来源：
SURFACE SCIENCE | 1970年 / 20卷 / 02期
关键词：
D O I：
10.1016/0039-6028(70)90196-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
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页码：434 / &
相关论文
共 8 条
[1]  
CHENG YC, TO BE PUBLISHED
[2]   SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].
GOETZBERGER, A ;
HEINE, V ;
NICOLLIAN, EH .
APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+
[3]  
GUMMEL H, 1957, ANN PHYS, V2, P562
[4]   CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].
LAX, M .
PHYSICAL REVIEW, 1960, 119 (05) :1502-1523
[5]   NEW MODEL FOR INTERFACE CHARGE-CARRIER MOBILITY - ROLE OF MISFIT DISLOCATIONS [J].
NEUMARK, GF .
PHYSICAL REVIEW LETTERS, 1968, 21 (17) :1252-+
[6]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
NICOLLIA.EH ;
GOETZBER.A .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+
[7]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[8]  
WHELAN MV, 1965, PHILIPS RES REP, V20, P562
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