INVESTIGATION OF DOPING LEVEL IN OVERCOMPENSATED P-GAP LAYERS GROWN BY LIQUID-PHASE EPITAXY

被引：1

作者：

PFEIFER, J

CSONTOS, L

SZENTPALI, B

机构：

来源：

ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1978年 / 44卷 / 01期

关键词：

D O I：

10.1007/BF03157216

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：29 / 42

页数：14

相关论文

共 32 条

[1] GAP LIQUID-PHASE EPITAXIAL-GROWTH USING A VERTICAL FURNACE SYSTEM
AKITA, K
NAKAI, S
KINUGASA, T
KOTANI, T
DAZAI, K
RYUZAN, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (05) : 631 - 635
[2] NITROGEN DOPING OF GAP DURING LPE GROWTH - KINETIC STUDY
AKITA, K
NAKAI, S
KOTANI, T
DAZAI, K
RYUZAN, O
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 28 (02) : 263 - 266
[3] GAP GREEN LIGHT-EMITTING DIODES WITH P-N-P-N STRUCTURE
BEPPU, T
TOYAMA, M
KASAMI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (09) : 1338 - &
[4] GROWTH OF GAP LAYERS FROM THIN ALIQUOT MELTS - LIQUID-PHASE EPITAXY AS A COMMERCIAL PROCESS
BERGH, AA
SAUL, RH
PAOLA, CR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1558 - 1563
[5] EFFICIENT RED GAP LEDS WITH COMPENSATED P-LAYERS
BHARGAVA, RN
MURAU, PC
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3541 - 3546
[6] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS
CHANG, LL
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 374 - &
[7] CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281
[8] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[9] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION
CROSSLEY, I
SMALL, MB
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) : 157 - &
[10] Dazai K., 1973, Fujitsu Scientific and Technical Journal, V9, P149

← 1 2 3 4 →