RAMAN-SPECTROSCOPY OF INSB/CDTE HETEROSTRUCTURES - IMPROVED INTERFACE QUALITY OBTAINED BY CD OVERPRESSURE DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：23

作者：

ZAHN, DRT

WILLIAMS, RH

GOLDING, TD

DINAN, JH

MACKEY, KJ

GEURTS, J

RICHTER, W

机构：

[1] USA,CTR NIGHT VIS & ELECTROOPT,FT BELVOIR,VA 22060

[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

[3] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-5100 AACHEN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2409 / 2410

页数：2

共 9 条

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[3]

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[5]

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[6]

Richter W., 1984, Polarons and Excitons in Polar Semiconductors and Ionic Crystals. Proceedings of the Antwerp Advanced Study Institute, P209

[7] ON THE PROPERTIES OF INSB QUANTUM WELLS [J].

VANWELZENIS, RG ;

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SOLID-STATE ELECTRONICS, 1984, 27 (02) :113-120

[8] AN MBE ROUTE TOWARDS CDTE/INSB SUPERLATTICES [J].

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[9]

ZAHN D, UNPUB

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