ACCELERATION FACTORS FOR THE DECOMPOSITION OF THERMALLY GROWN SIO2-FILMS

被引：17

作者：

HOFMANN, K ^{[1
]}

RAIDER, SI ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1149/1.2100415

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：240 / 244

页数：5

共 19 条

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[7] DYNAMICAL OBSERVATION OF ROOM-TEMPERATURE INTERFACIAL REACTION IN METAL-SEMICONDUCTOR SYSTEM BY AUGER-ELECTRON SPECTROSCOPY [J].

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