INTERFACE STATES AND FIXED CHARGES IN NANOMETER-RANGE THIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING

被引：41

作者：

HORI, T

NAITO, Y

IWASAKI, H

ESAKI, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期

关键词：

D O I：

10.1109/EDL.1986.26514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：669 / 671

页数：3

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