INTERFACE STATES AND FIXED CHARGES IN NANOMETER-RANGE THIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING

被引：41
作者：
HORI, T
NAITO, Y
IWASAKI, H
ESAKI, H
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期
关键词：
D O I：
10.1109/EDL.1986.26514
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：669 / 671
页数：3
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