INTERFACE STATES AND FIXED CHARGES IN NANOMETER-RANGE THIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING

被引：41

作者：

HORI, T

NAITO, Y

IWASAKI, H

ESAKI, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期

关键词：

D O I：

10.1109/EDL.1986.26514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：669 / 671

页数：3

共 18 条

[1] HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS [J].

CHANG, CC ;

KAMGAR, A ;

KAHNG, D .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :476-478

[2] STUDY OF ELECTRICAL CHARACTERISTICS ON THERMALLY NITRIDED SIO2 (NITROXIDE) FILMS [J].

CHEN, CT ;

TSENG, FC ;

CHANG, CY ;

LEE, MK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :875-877

[3] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :184-188

[4] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

[5]

Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[6] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS [J].

MOSLEHI, MM ;

SARASWAT, KC ;

SHATAS, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1113-1115

[7] COMPOSITIONAL STUDIES OF THERMALLY NITRIDED SILICON DIOXIDE (NITROXIDE) [J].

MOSLEHI, MM ;

HAN, CJ ;

SARASWAT, KC ;

HELMS, CR ;

SHATAS, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) :2189-2197

[8] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J].

MOSLEHI, MM ;

SARASWAT, KC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :106-123

[9]

MOSLEHI MM, 1986, 5TH P INT S SIL MAT, V86, P379

[10]

Nulman J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P169

← 1 2 →