PHOTOELECTRIC PROPERTIES OF GALLIUM-DOPED SILICON

被引：0
作者：
GODIK, EE
POKROVSK.YE
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1967年 / 1卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：333 / +
页数：1
相关论文
共 18 条
[1]  
GODIK EE, 1966, FIZ TVERD TELA, V8, P1545
[2]  
GODIK EE, 1964, FIZ TVERD TELA, V6, P2358
[3]  
GODIK EE, 1967, FIZ TEKH POLUPROV, V1, P405
[4]  
GODIK EE, SOVIET PHYSICSSOLID, V8, P1228
[5]  
GODIK EE, SOVIET PHYSICSSOLID, V6, P1870
[6]   CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES [J].
HAMANN, DR ;
MCWHORTER, AL .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A) :A250-&
[7]  
KUCHERENKO IV, SOVIET PHYSICSSOLID, V7, P818
[8]  
KUCHERENKO IV, 1965, FIZ TVERD TELA, V7, P1017
[9]   STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J].
LAX, B ;
MAVROIDES, JG .
PHYSICAL REVIEW, 1955, 100 (06) :1650-1657
[10]   CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].
LAX, M .
PHYSICAL REVIEW, 1960, 119 (05) :1502-1523
12