THRESHOLD AND MEMORY SWITCHING IN POLYCRYSTALLINE SILICON

被引：15

作者：

MAHAN, JE

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.93538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：479 / 481

页数：3

共 16 条

[1]

ADLER D, 1977, SCI AM MAY

[2] SWITCHING TIMES IN AMORPHOUS BORON, BORON PLUS CARBON, AND SILICON THIN-FILMS [J].

CHARLES, HK ;

FELDMAN, C .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :819-830

[3] THRESHOLD SWITCHING IN HYDROGENATED AMORPHOUS-SILICON [J].

DENBOER, W .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :812-813

[4] ELECTROTHERMAL MODEL OF SWITCHING IN AMORPHOUS-SILICON FILMS [J].

DEY, SK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :445-448

[5] SWITCHING AND TEMPERATURE EFFECTS IN LATERAL FILMS OF AMORPHOUS SILICON [J].

FULENWIDER, JE ;

HERSKOWITZ, GJ .

PHYSICAL REVIEW LETTERS, 1970, 25 (05) :292-+

[6] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[7] SUBSTRATE EFFECTS IN THEORY OF NEGATIVE DIFFERENTIAL RESISTANCE [J].

HAYES, TM ;

THORNBUR.DD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05) :744-747

[8] THERMAL EFFECTS IN AMORPHOUS-SEMICONDUCTOR SWITCHING [J].

KAPLAN, T ;

ADLER, D .

APPLIED PHYSICS LETTERS, 1971, 19 (10) :418-&

[9] THRESHOLD SWITCHING IN CHALCOGENIDE GLASS FILMS [J].

LEE, SH ;

HENISCH, HK .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :230-231

[10]

MAHAN JE, UNPUB

← 1 2 →