PHOTOELECTRON DIFFRACTION EFFECTS IN XPS ANGULAR-DISTRIBUTIONS FROM GAAS(110) AND GE(110) SINGLE-CRYSTALS

被引:52
作者
OWARI, M [1 ]
KUDO, M [1 ]
NIHEI, Y [1 ]
KAMADA, H [1 ]
机构
[1] UNIV TOKYO,FAC EXPTL ENDOCRINOL,BUNKYO KU,TOKYO 113,JAPAN
关键词
D O I
10.1016/0368-2048(81)80022-9
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
引用
收藏
页码:131 / 140
页数:10
相关论文
共 16 条
[1]   STRUCTURE OF LAB6 (001) SURFACE STUDIED BY ANGLE-RESOLVED XPS AND LEED [J].
AONO, M ;
OSHIMA, C ;
TANAKA, T ;
BANNAI, E ;
KAWAI, S .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2761-2764
[2]  
BAIRD RJ, 1977, PHYS REV B, V15, P666, DOI 10.1103/PhysRevB.15.666
[3]  
BRUNNER J, 1978, HELV PHYS ACTA, V51, P21
[4]  
COOPER JW, 1969, PHYS REV, V117, P157
[5]   ESCA STUDIES OF CLEAN SI (111) SURFACE [J].
ERICKSON, NE .
PHYSICA SCRIPTA, 1977, 16 (5-6) :462-465
[6]   ANGULAR VARIATIONS IN CORE-LEVEL XPS PEAK INTENSITY RATIOS FROM SINGLE-CRYSTAL SOLIDS [J].
EVANS, S ;
RAFTERY, E ;
THOMAS, JM .
SURFACE SCIENCE, 1979, 89 (1-3) :64-75
[7]  
Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3
[8]  
FADLEY CS, 1972, ELECTRON SPECTROSCOP, P233
[9]   PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
HILL, JM ;
ROYCE, DG ;
FADLEY, CS ;
WAGNER, LF ;
GRUNTHANER, FJ .
CHEMICAL PHYSICS LETTERS, 1976, 44 (02) :225-231
[10]   STRUCTURAL AND CHEMICAL-STATE ANALYSIS OF THE HEAT-TREATED AU-GASB(110) INTERFACE BY MEANS OF ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY (ARXPS) [J].
KOSHIZAKI, N ;
KUDO, M ;
OWARI, M ;
NIHEI, Y ;
KAMADA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L349-L352