INTERACTION BETWEEN DISLOCATIONS AND HYDROGEN OR OXYGEN IN SILICON

被引:0
|
作者
OSIPIAN, YA
RTISHCHEV, AM
STEINMAN, EA
YAKIMOV, EB
YARYKIN, NA
机构
来源
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1982年 / 82卷 / 02期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:509 / 514
页数:6
相关论文
共 50 条
  • [1] Interaction between oxygen and dislocations in p-type silicon
    Cavalcoli, D.
    Castaldini, A.
    Cavallini, A.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 90 (04): : 619 - 622
  • [2] Interaction between oxygen and dislocations in p-type silicon
    D. Cavalcoli
    A. Castaldini
    A. Cavallini
    Applied Physics A, 2008, 90 : 619 - 622
  • [3] Theory of dislocations in diamond and silicon and their interaction with hydrogen
    Heggie, MI
    Jenkins, S
    Ewels, CP
    Jemmer, P
    Jones, R
    Briddon, PR
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (49) : 10263 - 10270
  • [4] INTERACTION BETWEEN DISLOCATIONS AND IMPURITIES IN SILICON
    SUMINO, K
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 195 - 205
  • [5] Hydrogen effects on the interaction between dislocations
    Ferreira, PJ
    Robertson, IM
    Birnbaum, HK
    ACTA MATERIALIA, 1998, 46 (05) : 1749 - 1757
  • [6] INTERACTION BETWEEN EDGE DISLOCATIONS AND VACANCIES IN SILICON
    MILEVSKII, LS
    SOVIET PHYSICS-SOLID STATE, 1963, 4 (07): : 1376 - 1379
  • [7] INTERACTION BETWEEN CURRENT CARRIERS AND DISLOCATIONS IN GERMANIUM AND SILICON
    PROKOPENKO, VM
    TALYANSKY, VI
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1980, 78 (02): : 672 - 676
  • [8] INTERACTION OF HYDROGEN WITH DISLOCATIONS
    KIRCHHEIM, R
    JOURNAL OF METALS, 1981, 33 (09): : A28 - A29
  • [9] On the locking of dislocations by oxygen in silicon
    Senkader, S
    Jurkschat, K
    Gambaro, D
    Falster, RJ
    Wilshaw, PR
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2001, 81 (03): : 759 - 775
  • [10] THE PRECIPITATION OF OXYGEN ON DISLOCATIONS IN SILICON
    SCHAAKE, HF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C388 - C388