MEASUREMENTS OF 4S4P1P LIFETIMES IN THE ZNI ISOELECTRONIC SEQUENCE - GAII, GEIII, ASIV

被引：48
作者：
ANDERSEN, T
ERIKSEN, P
POULSEN, O
RAMANUJAM, PS
机构：
[1] Institute of Physics, University of Aarhus
[2] Fysiska Institutioner, Lund Univ.
来源：
PHYSICAL REVIEW A | 1979年 / 20卷 / 06期
关键词：
D O I：
10.1103/PhysRevA.20.2621
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The oscillator strengths for the 4s2 S1-4s4p P1 resonance line in the ZnI isoelectronic sequence have been obtained for GaII, GeIII, and AsIV by means of lifetime measurements utilizing beam-foil spectroscopy at low initial ion energies. The energy dependence of the emission cross sections for the resonance transition and for the main cascades populating the resonance state in GaII exhibit significantly different energy dependence, which allows an elimination or strong reduction in the influence of the cascades by performing the lifetime measurements at low initial ion energies, for GaII at 100-150 keV. The experimental oscillator strengths are in good agreement with recent calculations by Froese-Fischer and Hansen. © 1979 The American Physical Society.
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页码：2621 / 2624
页数：4
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