ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS

被引：55

作者：

DEKEERSMAECKER, RF ^{[1
]}

DIMARIA, DJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.327716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1085 / 1101

页数：17

共 48 条

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[10]

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