COMPATIBILITY OF ZINC-OXIDE WITH SILICON IC PROCESSING

被引：53

作者：

VELLEKOOP, MJ ^{[1
]}

VISSER, CCG ^{[1
]}

SARRO, PM ^{[1
]}

VENEMA, A ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DIMES,DELFT,NETHERLANDS

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87083-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the passivation of zinc oxide by a thin silicon nitride layer. With this passivation, silicon wafers covered with zinc oxide can be further processed without contamination of the process chambers of the subsequent processes, and without damaging the zinc oxide layer. In addition, we review some process technology concerning zinc oxide: the cleaning and etching of zinc oxide and the etching of aluminium on zinc oxide. © 1990.

引用

页码：1027 / 1030

页数：4

共 10 条

[1]

GHIJSEN WJ, 1987, THESIS DELFT

[2]

HICKERNELL FS, 1984, P IEEE ULTR S DALL 1, P239

[3]

JOHNSON CA, 1988, P IEEE ULTR S, P279

[4] STUDIES OF OPTIMUM CONDITIONS FOR GROWTH OF RF-SPUTTERED ZNO FILMS [J].

KHURIYAKUB, BT ;

KINO, GS ;

GALLE, P .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3266-3272

[5]

ONO S, 1977, WAVE ELECTRON, V3, P35

[6]

OTAREDIAN T, IN PRESS MATER SCI E

[7]

VELLEKOOP MJ, 1988, P IEEE ULTRASONICS S, P575

[8]

VELLEKOOP MJ, 1987, P IEEE ULTRASONICS S, P641

[9]

VISSER JH, 1989, IEEE INT C CONS EL, P90

[10] BEHAVIOR OF SINX FILMS AS MASKS FOR ZN DIFFUSION [J].

ZOU, WX ;

VAWTER, GA ;

MERZ, JL ;

COLDREN, LA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :828-831

← 1 →