HGCDTE ON GAAS/SI FOR MIDWAVELENGTH INFRARED FOCAL PLANE ARRAYS

被引：13
|
作者：
ZANIO, K
BEAN, R
MATTSON, R
VU, P
TAYLOR, S
MCINTYRE, D
ITO, C
CHU, M
机构：
[1] FORD AEROSP & COMMUN CORP,COLORADO SPRINGS,CO 80908
[2] FERMION CORP,CHATSWORTH,CA 91311
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期
关键词：
D O I：
10.1063/1.102561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Mid-wavelength HgCdTe was grown by metalorganic chemical vapor deposition at 390°C on CdTe/GaAs/Si substrates. Resistance-area products as high as 107 Ω cm2 were measured for 320×5 arrays of detectors having a λco of 4.6 μm at 77 K. Rudimentary thermal imaging was demonstrated for 1×32 hybrid HgCdTe/Si arrays having a λco of 2.8 μm. Temperature cycling of these arrays between room temperature and 77 K caused no significant degradation of the resistance-area products of the HgCdTe detectors.
引用
收藏
页码：1207 / 1209
页数：3
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