ELECTRONIC AND OPTICAL-DEVICES WITH GALLIUM-ARSENIDE ON SILICON PREPARED BY MBE

被引：3

作者：

MORKOC, H

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(89)90356-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：79 / 86

页数：8

共 50 条

[1] GALLIUM-ARSENIDE DEVICES
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SOLID STATE TECHNOLOGY, 1988, 31 (03) : 69 - 69
[2] GALLIUM-ARSENIDE ON SILICON
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[4] RELIABILITY OF GALLIUM-ARSENIDE DEVICES
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[6] OPTICAL AND ELECTRONIC-PROPERTIES OF VANADIUM IN GALLIUM-ARSENIDE
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[9] HETEROEPITAXY OF GALLIUM-ARSENIDE ON SILICON
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[10] A NOVEL METALLIZATION STRUCTURE FOR SILICON AND GALLIUM-ARSENIDE POWER DEVICES
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