SOLUTION GROWN SIC P-N JUNCTIONS

被引：64

作者：

BRANDER, RW

SUTTON, RP

机构：

[1] General Electric Company Limited, Central Research Laboratories, Hirst Research Centre, Wembley, Middlesex

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1969年 / 2卷 / 03期

关键词：

D O I：

10.1088/0022-3727/2/3/301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of silicon carbide on α-SiC substrates has been carried out at 1650°C in carbon-saturated silicon solutions. The quality of growth is found to be strongly dependent on the inclination of the substrate in the melt, an angle of 40°to the horizontal resulting in the growth of uniform layers of the same polytype as the substrate. With this technique p-n junctions have been prepared using nitrogen, aluminium and boron impurities, and their diode and electroluminescent properties examined.

引用

页码：309 / &

共 24 条

[1]

BARTLETT RW, 1967, J ELECTROCHEM SOC, V114, P1149

[2] THE GROWTH OF SILICON CARBIDE FROM MOLTEN SILICON [J].

BECKMANN, GEJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (01) :84-86

[3] X-RAY METHOD FOR DETERMINATION OF POLARITY OF SIC CRYSTALS [J].

BRACK, K .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3560-&

[4] ETCHING OF ALPHA-SILICON CARBIDE [J].

BRANDER, RW ;

BOUGHEY, AL .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (07) :905-&

[5]

BRANDER RW, 1965, GECJ SCIENCE TECH, V32, P15

[6] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J].

CAMPBELL, RB ;

CHU, TL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :825-&

[7] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J].

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW, 1962, 127 (06) :1868-&

[8]

GREEBE CAA, 1963, PHILIPS REV REP S1

[9]

HALDEN FA, 1960, SILICON CARBIDE

[10] PHOTOLUMINESCENCE OF NITROGEN-EXCITON COMPLEXES IN 6H SIC [J].

HAMILTON, DR ;

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW, 1963, 131 (01) :127-&

← 1 2 3 →