SOLUTION GROWN SIC P-N JUNCTIONS

Epitaxial growth of silicon carbide on α-SiC substrates has been carried out at 1650°C in carbon-saturated silicon solutions. The quality of growth is found to be strongly dependent on the inclination of the substrate in the melt, an angle of 40°to the horizontal resulting in the growth of uniform layers of the same polytype as the substrate. With this technique p-n junctions have been prepared using nitrogen, aluminium and boron impurities, and their diode and electroluminescent properties examined.