CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE

被引：288
作者：
DEAL, BE [1 ]
机构：
[1] FAIRCHILD CAMERA & INSTRUMENT CORP, RES & DEV LAB, PALO ALTO, CA 94304 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 06期
关键词：
D O I：
10.1149/1.2402380
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C198 / C205
页数：8
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