ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON

被引：27

作者：

MULLER, H ^{[1
]}

KRANZ, H ^{[1
]}

RYSSEL, H ^{[1
]}

SCHMID, K ^{[1
]}

机构：

[1] TECH UNIV MUNICH,LEHRSTUHL INTEGRIERTE SCHALTUNGEN,D-8 MUNICH 2,WEST GERMANY

来源：

APPLIED PHYSICS | 1974年 / 4卷 / 02期

关键词：

D O I：

10.1007/BF00884266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：115 / 123

页数：9

共 25 条

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[3]

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[5]

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IRVIN, JC .

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[9] CONCENTRATION DEPENDENT DIFFUSION OF ARSENIC IN SILICON [J].

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[10]

LINDHARD J, 1973, KGL DANSKE VIDENSKAB, V33

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