ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON

[1] MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (04) : 441 - &

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CROWDER BL, 1971, ELECTROCHEMICAL SOC, V118, P943

[4] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[5] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[7] IWAKI M, 1973, ION IMPLANTATION SEM

[8] JOHNSON WS, 1969, PROJECTED RANGE STAT

[9] CONCENTRATION DEPENDENT DIFFUSION OF ARSENIC IN SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (02): : 335 - +

[10] LINDHARD J, 1973, KGL DANSKE VIDENSKAB, V33

[1] MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (04) : 441 - &

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CROWDER BL, 1971, ELECTROCHEMICAL SOC, V118, P943

[4] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[5] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[7] IWAKI M, 1973, ION IMPLANTATION SEM

[8] JOHNSON WS, 1969, PROJECTED RANGE STAT

[9] CONCENTRATION DEPENDENT DIFFUSION OF ARSENIC IN SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (02): : 335 - +

[10] LINDHARD J, 1973, KGL DANSKE VIDENSKAB, V33