Optical and Electrical Properties of Two-dimensional MoS2 and Pentacene/ MoS2 Heterojunction

被引:0
|
作者
Bai Zhi-ying [1 ]
Deng Jin-xiang [1 ]
Pan Zhi-wei [1 ]
Zhang Hao [1 ]
Kong Le [1 ]
Wang Gui-sheng [1 ]
机构
[1] Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
基金
中国国家自然科学基金;
关键词
Two dimensional material; Heterojunction; Chemical vapor deposition method; Raman enhancement; Optical and electrical properties;
D O I
10.3788/gzxb20184712.1231001
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Using sulfur powder and MoO3 powder as raw materials, the MoS(2 )film was synthesized by chemical vapor deposition method, and was characterized by optical microscopy, atomic force microscopy, raman spectroscopy and X-ray diffraction. Results show that the crystal morphology of the MoS2 is triangle with size of 60 mu m and thickness of 0.7 nm; and as one kind of the ideal substrates for surface-enhanced Raman scattering, two-dimensional MoS2 can promote the charge transfer between the organic molecule and MoS2, so the Raman intensity of them are enhanced. The pentacene was adsorbed onto the MoS2 film by physical vapor deposition method, and the organic-inorganic pentacene/MoS2 heterojunction with ideal rectifier characteristic was prepared. Analysing the ln (I/V-2)-1/V curve, it is seen that the Fowler-Nordheim tunnelling phenomenon occured through the heterojunction; logI-logV curve shows that charges transport controled by ohmic conduction at 0 similar to 1 V voltages zone, and space-charge-limited currents predominate at over 1 V voltages zone. The research of MoS2 single-layer film and pentacene film will be contributed to the optoelectronic field.
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页数:6
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共 27 条
  • [21] van der Waals Heterostructure of Phosphorene and Graphene: Tuning the Schottky Barrier and Doping by Electrostatic Gating
    Padilha, J. E.
    Fazzio, A.
    da Silva, Antonio J. R.
    [J]. PHYSICAL REVIEW LETTERS, 2015, 114 (06)
  • [22] Single-layer MoS2 transistors
    Radisavljevic, B.
    Radenovic, A.
    Brivio, J.
    Giacometti, V.
    Kis, A.
    [J]. NATURE NANOTECHNOLOGY, 2011, 6 (03) : 147 - 150
  • [23] High performance photoresponsive field-effect transistors based on MoS2/pentacene heterojunction
    Ren, Qiang
    Xu, Qingsheng
    Xia, Hongquan
    Luo, Xiao
    Zhao, Feiyu
    Sun, Lei
    Li, Yao
    Lv, Wenli
    Du, Lili
    Peng, Yingquan
    Zhao, Zhong
    [J]. ORGANIC ELECTRONICS, 2017, 51 : 142 - 148
  • [24] Emerging Photoluminescence in Monolayer MoS2
    Splendiani, Andrea
    Sun, Liang
    Zhang, Yuanbo
    Li, Tianshu
    Kim, Jonghwan
    Chim, Chi-Yung
    Galli, Giulia
    Wang, Feng
    [J]. NANO LETTERS, 2010, 10 (04) : 1271 - 1275
  • [25] Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics
    Wang, Chengliang
    Dong, Huanli
    Hu, Wenping
    Liu, Yunqi
    Zhu, Daoben
    [J]. CHEMICAL REVIEWS, 2012, 112 (04) : 2208 - 2267
  • [26] Synthesis and optical properties of MoS2 and isomorphous nanoclusters in the quantum confinement regime
    Wilcoxon, JP
    Newcomer, PP
    Samara, GA
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) : 7934 - 7944
  • [27] Dye-Sensitized MoS2 Photodetector with Enhanced Spectral Photoresponse
    Yu, Seong Hun
    Lee, Youngbin
    Jang, Sung Kyu
    Kang, Jinyeong
    Jeon, Jiwon
    Lee, Changgu
    Lee, Jun Young
    Kim, Hyungjun
    Hwang, Euyheon
    Lee, Sungjoo
    Cho, Jeong Ho
    [J]. ACS NANO, 2014, 8 (08) : 8285 - 8291