ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE-N AND ZN1-XMGXSYSE1-Y-N THIN-FILMS

被引：17
|
作者：
MENSZ, PM
HERKO, S
HABERERN, KW
GAINES, J
PONZONI, C
机构：
[1] Philips Laboratories, Briarcliff Manor
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 20期
关键词：
D O I：
10.1063/1.110339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Differential van der Pauw-Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1-xMgxSySe1-y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy of the nitrogen accepters in ZnSe:N of 104 meV. Donor compensation in the ZnSe:N samples was negligible. Compared with ZnSe:N, samples of Zn1-xMgxSySe1-y:N, exhibited a significantly lower value of room-temperature mobility of holes, and fast-carrier freeze-out at relatively high temperature, approximately T = 200 K.
引用
收藏
页码：2800 / 2802
页数：3
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