PHOTOREDUCTION AND OXIDATION OF AMORPHOUS INDIUM OXIDE

被引：34

作者：

PASHMAKOV, B ^{[1
]}

CLAFLIN, B ^{[1
]}

FRITZSCHE, H ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(93)90826-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Exposure to hupsilon > 3 eV light of amorphous InO(x) films in vacuum or an inert gas causes outdiffusion of oxygen and an increase in conductivity to more than 5x10(2) OMEGA-1cm-1. The same films can be reoxidized, for example by ozone, to obtain conductivities less than 10(-4) OMEGA-1cm-1 at 300 K. Photoreduction and oxidation can change the conduction properties of one and the same film in a reproducible manner.

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收藏

页码：619 / 622

页数：4

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