TECHNIQUE FOR LATERAL TEMPERATURE PROFILING IN OPTOELECTRONIC DEVICES USING A PHOTOLUMINESCENCE MICROPROBE

被引：69
作者：
HALL, DC [1 ]
GOLDBERG, L [1 ]
MEHUYS, D [1 ]
机构：
[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期
关键词：
D O I：
10.1063/1.107890
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A photoluminescence microprobe technique with less-than-or-equal-to 0.2-degrees-C and < 5-mu-m resolution is demonstrated for measuring lateral temperature profiles in GaAs-based optoelectronic devices. The technique is used to measure the junction-heating induced temperature gradient in both single-stripe and broad-area diode lasers. The effective focal length of the thermally induced refractive index gradient lens is determined from the temperature gradient in a broad-area device.
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页码：384 / 386
页数：3
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