TECHNIQUE FOR LATERAL TEMPERATURE PROFILING IN OPTOELECTRONIC DEVICES USING A PHOTOLUMINESCENCE MICROPROBE

被引：69

作者：

HALL, DC ^{[1
]}

GOLDBERG, L ^{[1
]}

MEHUYS, D ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.107890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photoluminescence microprobe technique with less-than-or-equal-to 0.2-degrees-C and < 5-mu-m resolution is demonstrated for measuring lateral temperature profiles in GaAs-based optoelectronic devices. The technique is used to measure the junction-heating induced temperature gradient in both single-stripe and broad-area diode lasers. The effective focal length of the thermally induced refractive index gradient lens is determined from the temperature gradient in a broad-area device.

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页码：384 / 386

页数：3

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