A HIGH-FLUX ATOMIC OXYGEN SOURCE FOR THE DEPOSITION OF HIGH T(C) SUPERCONDUCTING FILMS

被引：17

作者：

YUJAHNES, LS ^{[1
]}

BROGAN, WT ^{[1
]}

ANDERSON, AC ^{[1
]}

CIMA, MJ ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1992年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.1143226

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A high-flux atomic oxygen source has been developed for the deposition of in situ superconducting high T(c) films under conditions that require low chamber pressures (less-than-or-equal-to 10(-4) Torr). The source uses a remote microwave plasma to generate the atomic species and is capable of producing an atomic oxygen flux greater than 2 X 10(16) cm-2 s-1. The O2 dissociation efficiency of the atomic oxygen source is measured to be approximately 25%-30% for an O2 flow of 5 sccm. This high efficiency is achieved by the combined effects of a boric acid surface treatment to minimize recombination on the quartz tube and the addition of N2 to the oxygen plasma to increase the atomic oxygen yield. We have developed a treatment for the quartz surface that gives reproducible atomic oxygen flux with no degradation of the surface coating with repeated usage.

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页码：4149 / 4153

页数：5

相关论文

共 20 条

[1] INSITU FORMATION OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS USING PURE OZONE VAPOR OXIDATION [J].

BERKLEY, DD ;

JOHNSON, BR ;

ANAND, N ;

BEAUCHAMP, KM ;

CONROY, LE ;

GOLDMAN, AM ;

MAPS, J ;

MAUERSBERGER, K ;

MECARTNEY, ML ;

MORTON, J ;

TUOMINEN, M ;

ZHANG, YJ .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1973-1975

[2] EFFECTS OF IMPURITIES ON PRODUCTION OF OXYGEN ATOMS BY A MICROWAVE DISCHARGE [J].

BROWN, RL .

JOURNAL OF PHYSICAL CHEMISTRY, 1967, 71 (08) :2492-&

[3]

ELIASSON B, 1985, KLR8340C B BOV INT R, P129

[4] MICROWAVE DISCHARGE CAVITIES OPERATING AT 2450 MHZ [J].

FEHSENFELD, FC ;

EVENSON, KM ;

BROIDA, HP .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (03) :294-+

[5] RECOMBINATION OF ATOMS AT SURFACES .5. OXYGEN ATOMS AT OXIDE SURFACES [J].

GREAVES, JC ;

LINNETT, JW .

TRANSACTIONS OF THE FARADAY SOCIETY, 1959, 55 (08) :1346-1354

[6] INSITU GROWTH OF YBA2CU3OX THIN-FILMS BY REACTIVE COSPUTTERING [J].

HAHN, MR ;

HYLTON, TL ;

CHAR, K ;

BEASLEY, MR ;

KAPITULNIK, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (01) :82-86

[7] THERMODYNAMIC ESTIMATION OF OXIDATION ABILITY OF VARIOUS GASES USED FOR THE PREPARATION OF SUPERCONDUCTING FILMS AT HIGH-VACUUM [J].

HASHIMOTO, T ;

KOINUMA, H ;

KISHIO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1685-1686

[8]

HELLMAN ES, UNPUB J MATER RES

[9] STUDY OF THE SPUTTERING OF ONE-COMPONENT, 2-COMPONENT AND 3-COMPONENT TARGETS FOR THE PREPARATION OF YBA2CU3O7 SUPERCONDUCTING FILM [J].

HIRATA, K ;

ISHIBASHI, K ;

HOSOKAWA, N .

THIN SOLID FILMS, 1991, 206 (1-2) :132-136

[10] PHYSICAL VAPOR-DEPOSITION TECHNIQUES FOR THE GROWTH OF YBA2CU3O7 THIN-FILMS [J].

HUMPHREYS, RG ;

SATCHELL, JS ;

CHEW, NG ;

EDWARDS, JA ;

GOODYEAR, SW ;

BLENKINSOP, SE ;

DOSSER, OD ;

CULLIS, AG .

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1990, 3 (01) :38-52