AN OVERVIEW OF CMOS-SOI TECHNOLOGY AND ITS POTENTIAL USE IN PARTICLE-DETECTION SYSTEMS

被引：6

作者：

COLINGE, JP

机构：

[1] IMEC, 3001 Leuven

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 305卷 / 03期

关键词：

D O I：

10.1016/0168-9002(91)90164-L

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon-on-insulator (SOI) is a rapidly evolving technology. In a few years. it has evolved from materials research to high-leverage integrated circuits applications. SOI MOSFETs have several unique properties which make SOI technology very attractive for integration in the deep-submicron regime. In addition. SOI devices are inherently much more resistant to ionizing particles than bulk transistors. SOI devices are also the building blocks of three-dimensional ICs, which offer interesting possibilities in the field of smart sensors with on-chip signal processing.

引用

页码：615 / 619

页数：5

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