AN OVERVIEW OF CMOS-SOI TECHNOLOGY AND ITS POTENTIAL USE IN PARTICLE-DETECTION SYSTEMS

被引：6
|
作者：
COLINGE, JP
机构：
[1] IMEC, 3001 Leuven
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 305卷 / 03期
关键词：
D O I：
10.1016/0168-9002(91)90164-L
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon-on-insulator (SOI) is a rapidly evolving technology. In a few years. it has evolved from materials research to high-leverage integrated circuits applications. SOI MOSFETs have several unique properties which make SOI technology very attractive for integration in the deep-submicron regime. In addition. SOI devices are inherently much more resistant to ionizing particles than bulk transistors. SOI devices are also the building blocks of three-dimensional ICs, which offer interesting possibilities in the field of smart sensors with on-chip signal processing.
引用
收藏
页码：615 / 619
页数：5
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