CARRIER NONRESONANT TUNNELING IN ASYMMETRIC COUPLED DOUBLE QUANTUM-WELLS

被引：1
|
作者：
XU, SJ [1 ]
JIANG, DS [1 ]
LI, GH [1 ]
LUO, JS [1 ]
机构：
[1] XIAN JIAO TONG UNIV,DEPT ELECTR ENGN,XIAN 710049,PEOPLES R CHINA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 02期
关键词：
D O I：
10.1016/0749-6036(92)90343-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The excitation power dependence of nonresonant tunneling rates for photogenerated carriers is studied in a GaAs/Al0.35Ga0.65As/GaAs (50A/40A/100A) asymmetric double quantum well p-i-n structure by photoluminescence (PL) measurement. It is found that PL from the two coupled wells depends strongly on excitation power. Especially, the PL peak intensity of the narrow well rapidly decreases as excitation power increases to a certain extent. The explanation for the strong excitation power dependence of the carrier tunneling rates is that LO-phonon-assisted tunneling enhances the rates significantly because of energy-band flattening due to the spatial separation of electrons and holes between the two coupled wells. Our results may be of significance in creating novel alloptical devices. © 1992.
引用
收藏
页码：231 / 235
页数：5
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