INSITU LOW-ENERGY ION-SCATTERING ANALYSIS OF INP SURFACE DURING MOLECULAR-BEAM EPITAXY

被引：16
作者：
KUBO, M
NARUSAWA, T
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.584998
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：697 / 700
页数：4
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