INSITU LOW-ENERGY ION-SCATTERING ANALYSIS OF INP SURFACE DURING MOLECULAR-BEAM EPITAXY

被引：16

作者：

KUBO, M

NARUSAWA, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：697 / 700

页数：4

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