THE SCHOTTKY DEVICE BASED ON DOPED POLY(PARA-PHENYLENE)

被引：23
作者：
GOLDENBERG, LM
KRINICHNYI, VI
NAZAROVA, IB
机构：
[1] Institute of Chemical Physics, U.S.S.R. Academy of Sciences, Chernogolovka
来源：
SYNTHETIC METALS | 1991年 / 44卷 / 02期
关键词：
D O I：
10.1016/0379-6779(91)91835-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A sandwich-type Schottky element based on doped poly(p-phenylene) has been investigated. The doped poly(p-phenylene) was shown to give rectifying contact for indium. The Schottky device parameters have been evaluated from the voltage-current characteristics.
引用
收藏
页码：199 / 203
页数：5
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