OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE IN GAAS FIELD-EFFECT TRANSISTORS

被引:3
作者
MUZUMDAR, P
MIRCHANDANI, K
MILSHTEIN, S
机构
[1] Electrical Engineering Department, University of Lowell, Lowell
关键词
D O I
10.1063/1.349697
中图分类号
O59 [应用物理学];
学科分类号
摘要
Negative differential resistance (NDR) is observed in GaAs metal-semiconductor field-effect transistors. The device under test is a GaAs dual-gate device. The observation of NDR is attributed to intervalley transfer in GaAs. The characteristic is field controlled and is n type in shape. NDR can be controlled by independent control of the two gates. It is also seen for a fixed ratio of gate voltages.
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页码:1063 / 1065
页数:3
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