ELECTRICAL PROPERTIES OF SN-DOPED GAP

被引：10

作者：

CASEY, HC

ERMANIS, F

LUTHER, LC

DAWSON, LR

VERLEUR, HW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.1660499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2130 / &

共 12 条

[1]

Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].

CASEY, HC ;

ERMANIS, F ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+

[3]

DAWSON LR, UNPUBLISHED

[4] Optical properties of the donor tin in gallium phosphide [J].

Dean, P. J. ;

Faulkner, R. A. ;

Kimura, S. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4062-4076

[5] PAIR SPECTRA INVOLVING SHALLOW ACCEPTOR MG IN GAP [J].

DEAN, PJ ;

SCHONHERR, EG ;

ZETTERSTROM, RB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3475-+

[6] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FROSCH, CJ ;

HENRY, CH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&

[7]

DEAN PJ, PRIVATE COMMUNICATIO

[8] THERMAL IONIZATION ENERGIES OF CD AND ZN IN GAP [J].

ERMANIS, F ;

CASEY, HC ;

WOLFSTIRN, K .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4856-+

[9] PAIR SPECTRA INVOLVING DONOR AND/OR ACCEPTOR GERMANIUM IN GAP [J].

GERSHENZON, M ;

TRUMBORE, FA ;

MIKULYAK, RM ;

KOWALCHIK, M .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :486-+

[10] EPITAXIAL GROWTH OF ZINC- AND CADMIUM-DOPED GALLIUM PHOSPHIDE BY GALLIUM CHLORIDE VAPOR TRANSPORT [J].

LUTHER, LC ;

ROCCASECCA, DD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :850-+

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