WIDTH-INDEPENDENT NARROW NMOSFET RELIABILITY BY SPLIT-WELL DRIVE-IN

被引：7

作者：

MAZURE, C

LILL, A

ZELLER, C

机构：

[1] RES & DEV LABS,W-8000 MUNICH,GERMANY

[2] SIEMENS AG,DIV SEMICOND,W-8000 MUNICH,GERMANY

[3] SIEMENS AG,RES & DEV LABS,MUNICH,GERMANY

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期

关键词：

Semiconductor Devices; MOSFET;

D O I：

10.1109/55.55257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By splitting the well drive-in into two parts, before and after the field oxidation, it is possible to compensate the segregation effects due to field oxidation without having to increase the well concentration in the active areas. Due to the smaller dopant gradient between isolation and active areas, nearly neutral transistor-width dependence is achieved resuiting in a width-independent behavior of the transistor degradation. © 1990 IEEE

引用

页码：224 / 226

页数：3