PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORS

被引：11

作者：

FINETTI, M ^{[1
]}

MASETTI, G ^{[1
]}

NEGRINI, P ^{[1
]}

SOLMI, S ^{[1
]}

机构：

[1] UNIV ANCONA,FAC ENGN,DEPT ELECTR,I-60100 ANCONA,ITALY

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 01期

关键词：

D O I：

10.1049/ip-i-1.1980.0007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 41

页数：5

共 26 条

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SERVIDORI, M ;

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VECCHI, I .

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[2]

ARMIGLIATO A, UNPUBLISHED

[3]

CLAEYS CL, 1977, SEMICONDUCTOR CHARAC, P366

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FAIR, RB ;

TSAI, JCC .

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[5] EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON HIGH-CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON [J].

FAIR, RB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :860-868

[6]

Finetti M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P724

[7]

FINETTI M, UNPUBLISHED

[8] EFFECT OF OXIDATION ON THE DIFFUSION OF PHOSPHORUS IN SILICON [J].

FRANCIS, R ;

DOBSON, PS .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :280-284

[9] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[10]

KENDALL DL, 1977, P IEEE SECTIONAL M M, P1

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