INVESTIGATION OF ERBIUM DOPING OF INP AND (GA,IN)(AS,P) LAYERS GROWN BY LPE

被引：15

作者：

CHATTERJEE, AK

HAIGH, J

机构：

[1] British Telecom Research Laboratories, Martlesham Heath

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90027-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of erbium-doped InP and (Ga,In)(As,P) lattice-matched to InP has been carried out using LPE, incorporating several refinements designed to reduce the deleterious formation of the oxide and hydride of erbium which have been a feature of previous reports. The work did not reproducibly result in material capable of Er-related luminescence near 1.54-mu-m. It is concluded that erbium-rich particulate inclusions in the layers are the major source of the 1.54-mu-m emission previously reported from such LPE layers.

引用

页码：537 / 542

页数：6

共 26 条

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