MECHANISM OF INTERNAL GETTERING OF INTERSTITIAL IMPURITIES IN CZOCHRALSKI-GROWN SILICON

被引：187

作者：

GILLES, D ^{[1
]}

WEBER, ER ^{[1
]}

HAHN, S ^{[1
]}

机构：

[1] SILTEC SILICON INC,MENLO PK,CA 94025

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.64.196

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Results of the low-temperature precipitation of interstitial Fe (s250°C) in Czochralski-grown Si after different annealing treatments for the precipitation of oxygen are presented. It is concluded that the Fe solubility is not affected by the oxygen-precipitation process. The Fe-precipitation kinetics are found to be strongly accelerated by oxygen-precipitatione induced defects. Based on the results the mechanism of internal gettering is derived. For the first time the contribution of oxygen precipitates and dislocations to the internal-gettering process have been determined quantitatively. © 1990 The American Physical Society.

引用

页码：196 / 199

页数：4

共 15 条

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