GAS SOURCE MBE GROWTH OF INP

被引:24
作者
MORISHITA, Y
MARUNO, S
GOTODA, M
NOMURA, Y
OGATA, H
机构
关键词
D O I
10.1016/0022-0248(89)90376-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:176 / 180
页数:5
相关论文
共 8 条
[1]   ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].
ASAI, H .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :425-433
[2]   CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FUJIWARA, K ;
KANAMOTO, K ;
OHTA, YN ;
TOKUDA, Y ;
NAKAYAMA, T .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :104-112
[3]  
KAWAGUCHI Y, 1986, I PHYS C SER, V79, P79
[4]   OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP [J].
MORISHITA, Y ;
MARUNO, S ;
GOTODA, M ;
NOMURA, Y ;
OGATA, H .
APPLIED PHYSICS LETTERS, 1988, 53 (01) :42-44
[5]   GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y [J].
PANISH, MB ;
SUMSKI, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3571-3576
[6]   GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].
PANISH, MB ;
TEMKIN, H ;
SUMSKI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665
[7]   OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING CHEMICAL BEAM EPITAXY [J].
TSANG, WT ;
CHIU, TH ;
CUNNINGHAM, JE ;
ROBERTSON, A .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1376-1378
[8]   ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO [J].
WALUKIEWICZ, W ;
LAGOWSKI, J ;
JASTRZEBSKI, L ;
RAVA, P ;
LICHTENSTEIGER, M ;
GATOS, CH ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2659-2668