PHOTOCONDUCTIVITY OF ULTRATHIN ZINC-OXIDE FILMS

被引：281

作者：

TAKAHASHI, Y ^{[1
]}

KANAMORI, M ^{[1
]}

KONDOH, A ^{[1
]}

MINOURA, H ^{[1
]}

OHYA, Y ^{[1
]}

机构：

[1] NOK CORP,DEPT RES 1,DIV RES & DEV,FUJISAWA,KANAGAWA 251,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12A期

关键词：

ZNO THIN FILMS; PHOTOCONDUCTION; GAS SENSING; SOL-GEL METHOD; N-TYPE OXIDE SEMICONDUCTORS;

D O I：

10.1143/JJAP.33.6611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical and photoelectrical properties of nondoped and doped zinc oxide films coated on glass plates by the dip-coating method are investigated at room temperature in various ambient atmospheres. The dark conductivity of the nondoped films exponentially decreased with decreasing film thickness while the conductivity under illumination of 350 nm light was almost constant at 10(0) S . cm(-1) irrespective of the film thickness. Consequently thinner films showed larger photoresponse than thicker films. This thickness dependence is explained by the variation of ZnO particle size with the film thickness (fine particle model) and the additional effect of the Schottky barrier generated between the film and gold electrodes.

引用

页码：6611 / 6615

页数：5

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