SILICON WAFER PROCESSING BY APPLICATION OF SPUN-ON DOPED AND UNDOPED SILICA LAYERS

被引：14
作者：
BECKER, JA [1 ]
机构：
[1] RHEIN WESTFAL TH AACHEN,INST THEORET ELEKTROTECH,TEMPLERGRABEN 55,51 AACHEN,WEST GERMANY
来源：
SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 01期
关键词：
D O I：
10.1016/0038-1101(74)90116-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：87 / 94
页数：8
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