FMR INVESTIGATION OF FE(111) THIN-FILMS

被引:3
|
作者
REZENDE, SM [1 ]
MOURA, JAS [1 ]
DEAGUIAR, FM [1 ]
SCHREINER, WH [1 ]
机构
[1] UNIV FED RIO GRANDE SUL,INST FIS,BR-91500 PORTO ALEGRE,RS,BRAZIL
关键词
D O I
10.1016/0304-8853(94)01548-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The in-plane anisotropy of Fe films deposited by e-beam on Si(111) has been investigated by FMR at X-band frequencies. Resonance field data as a function of the field orientation confirm that the films grow epitaxially with excellent crystallinity in the [111] orientation. We also show that since the first-order crystal anisotropy energy does not vary in the (111) plane, it is possible to obtain precise measurements of the small second-order and stress induced in-plane anisotropy, as well as minute misorientations from the (111) plane.
引用
收藏
页码:663 / 664
页数:2
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