AMORPHIZATION OF P-IMPLANTED GAAS

被引：0

作者：

KRYNICKI, J ^{[1
]}

RZEWUSKI, H ^{[1
]}

TUROS, A ^{[1
]}

SIDOR, R ^{[1
]}

机构：

[1] INST NUCL STUDIES,WARSAW,POLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1994年 / 129卷 / 3-4期

关键词：

GAAS; IMPLANTATION; AMORPHIZATION; ENERGY DEPENDENCE;

D O I：

10.1080/10420159408229012

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Amorphization of GaAs by P+ implantation at room temperature with fluences ranging from 2*10(14) to 1*10(15) cm-2 with energies ranging from 40 to 170 keV has been investigated by means of the RBS channelling technique. The critical dose and the critical energy density for amorphization were determined. The results obtained do not confirm the expected model of homogeneous amorphization for 'light' P-ion implantation.

引用

页码：141 / 145

页数：5

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