THE INFLUENCE OF TECHNOLOGY AND SWITCHING PARAMETERS ON RESISTIVE SWITCHING BEHAVIOR OF Pt/HfO2/TiN MIM STRUCTURES

被引：3

作者：

Paskaleva, Albena ^{[1
]}

Hudec, Boris ^{[2
]}

Jancovic, Peter ^{[2
]}

Froehlich, Karol ^{[2
]}

Spassov, Dencho ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, 72 Tzarigradsko Chaussee, Sofia 1784, Bulgaria

[2] Slovak Acad Sci, Inst Elect Engn, Bratislava, Slovakia

来源：

FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS | 2014年 / 27卷 / 04期

关键词：

resistive switching; Pt/HfO2/TiN structures; interface engineering; atomic layer deposition;

D O I：

10.2298/FUEE1404621P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

引用

页码：621 / 630

页数：10

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