THE INFLUENCE OF TECHNOLOGY AND SWITCHING PARAMETERS ON RESISTIVE SWITCHING BEHAVIOR OF Pt/HfO2/TiN MIM STRUCTURES

被引：3

作者：

Paskaleva, Albena ^{[1
]}

Hudec, Boris ^{[2
]}

Jancovic, Peter ^{[2
]}

Froehlich, Karol ^{[2
]}

Spassov, Dencho ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, 72 Tzarigradsko Chaussee, Sofia 1784, Bulgaria

[2] Slovak Acad Sci, Inst Elect Engn, Bratislava, Slovakia

来源：

FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS | 2014年 / 27卷 / 04期

关键词：

resistive switching; Pt/HfO2/TiN structures; interface engineering; atomic layer deposition;

D O I：

10.2298/FUEE1404621P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

引用

页码：621 / 630

页数：10

共 23 条

[1] Metal oxide resistive memory switching mechanism based on conductive filament properties [J].

Bersuker, G. ;

Gilmer, D. C. ;

Veksler, D. ;

Kirsch, P. ;

Vandelli, L. ;

Padovani, A. ;

Larcher, L. ;

McKenna, K. ;

Shluger, A. ;

Iglesias, V. ;

Porti, M. ;

Nafria, M. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)

[2]

Bersuker G, 2010, INT EL DEVICES MEET

[3] Oxygen vacancy formation and the induced defect states in HfO2 and Hf-silicates - A first principles hybrid functional study [J].

Chen, Tsung-Ju ;

Kuo, Chin-Lung .

MICROELECTRONICS RELIABILITY, 2014, 54 (6-7) :1119-1124

[4] Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM [J].

Chen, Yang Yin ;

Goux, Ludovic ;

Clima, Sergiu ;

Govoreanu, Bogdan ;

Degraeve, Robin ;

Kar, Gouri Sankar ;

Fantini, Andrea ;

Groeseneken, Guido ;

Wouters, Dirk J. ;

Jurczak, Malgorzata .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (03) :1114-1121

[5] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[6]

Do Young Ho, 2008, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, V8, P80

[7] Atomic layer deposition of thin oxide films for resistive switching [J].

Froehlich, K. ;

Jancovic, P. ;

Hudec, B. ;

Derer, J. ;

Paskaleva, A. ;

Bertaud, T. ;

Schroeder, T. .

ATOMIC LAYER DEPOSITION APPLICATIONS 9, 2013, 58 (10) :163-170

[8]

Gao B., 2008, INT EL DEV M IEDM

[9] Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems [J].

Goux, L. ;

Wang, X. P. ;

Chen, Y. Y. ;

Pantisano, L. ;

Jossart, N. ;

Govoreanu, B. ;

Kittl, J. A. ;

Jurczak, M. ;

Altimime, L. ;

Wouters, D. J. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (06) :H244-H246

[10]

Lee HY, 2008, INT EL DEVICES MEET, P297, DOI 10.1109/IEDM.2008.4796677

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