MODELING AND ANALYSIS OF LASER-BEAM INDUCED CURRENT IMAGES IN SEMICONDUCTORS

被引：29

作者：

BUSENBERG, S ^{[1
]}

FANG, WF ^{[1
]}

ITO, K ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR APPL MATH SCI,LOS ANGELES,CA 90089

来源：

SIAM JOURNAL ON APPLIED MATHEMATICS | 1993年 / 53卷 / 01期

关键词：

SEMICONDUCTORS; LASER-BEAM INDUCED CURRENTS (LBIC); NONLINEAR ELLIPTIC SYSTEMS; IDENTIFICATION PROBLEM;

D O I：

10.1137/0153012

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

A mathematical model is developed for the new nondestructive optical technique called laser-beam-induced currents (LBIC), which can be used to detect electrically active regions and defects in semiconductors. The wellposedness of the model equations is shown, and an approximate model that simplifies the numerical implementation of the identification problem is obtained. Some numerical results are presented to show that the approximate model preserves the significant features that the LBIC technique has been experimentally shown to possess.

引用

页码：187 / 204

页数：18