TRANSVERSE MAGNETORESISTANCE AND HALL EFFECT IN N-TYPE INSB

被引：39

作者：

BATE, RT

WILLARDSON, RK

BEER, AC

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1959年 / 9卷 / 02期

关键词：

D O I：

10.1016/0022-3697(59)90202-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：119 / 128

页数：10

共 17 条

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[9] GALVANOMAGNETIC THEORY FOR N-TYPE GERMANIUM AND SILICON - HALL THEORY AND GENERAL BEHAVIOR OF MAGNETORESISTANCE [J].

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