LIQUIDUS AND SOLIDUS DATA AT 500 DEGREES C FOR IN-GA-SB SYSTEM

被引：31

作者：

ANTYPAS, GA

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(72)90111-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：181 / &

共 6 条

[1] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J].

ANTYPAS, GA .

[2] IN-GA-SB TERNARY PHASE DIAGRAM [J].

BLOM, GM ;

PLASKETT, TS .

[3] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

[4]

PANISH MB, 1971, GALLIUM ARSENIDE REL, P67

[5] GROWTH AND SOME PROPERTIES OF GAXIN1-XSB [J].

PLASKETT, TS ;

WOODS, JF .

[6] SOLID SOLUTION IN AIIIBV COMPOUNDS [J].

WOOLLEY, JC ;

SMITH, BA .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464) :214-223